1/8 may 2002 . std16ne06l n-channel 60v - 0.06 w - 16a dpak stripfet? power mosfet n typical r ds (on) = 0.06 w n avalanche rugged technology n low gate charge n high current capability n 175 o c operating temperature n low threshold drive n surface-mounting dpak (to-252) power package in tape & reel (suffix t4") description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n high current, high speed switching n solenoid and ralay drivers n dc-dc & dc-ac converters n motor control, audio amplifiers type v dss r ds(on) i d std16ne6l 60 v <0.07 w 16 a 1 3 dpak to-252 (suffix t4) absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 16a, di/dt 300a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 8a, v dd = 50v symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k w ) 60 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 16 a i d drain current (continuous) at t c = 100c 11 a i dm ( ) drain current (pulsed) 64 a p tot total dissipation at t c = 25c 40 w derating factor 0.3 w/c dv/dt (1) peak diode recovery voltage slope 7 v/ns e as (2) single pulse avalanche energy 60 mj t stg storage temperature -55 to 175 c t j operating junction temperature internal schematic diagram
std16ne06l 2/8 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 3.75 100 275 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10 v i d = 8 a v gs = 5 v i d = 8 a 0.06 0.07 0.070 0.085 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds >i d(on) xr ds(on)max i d =8a 9s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 800 125 50 pf pf pf
3/8 std16ne06l switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v i d = 10 a r g = 4.7 w v gs = 5 v (resistive load, figure 3) 20 45 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 48 v i d = 20 a v gs = 5v 14 8 4 20 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v clamp = 48 v i d = 20 a r g = 4.7 w, v gs = 5 v (inductive load, figure 5) 10 25 42 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 20 80 a a v sd (*) forward on voltage i sd = 16 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a di/dt = 100a/s v dd = 40 v t j = 150c (see test circuit, figure 5) 65 130 4 ns nc a electrical characteristics (continued) safe operating area thermal impedance
std16ne06l 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 std16ne06l normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage temperature . .
std16ne06l 6/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/8 std16ne06l dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 1 3 == b e == b2 g 2 a c2 c h a1 detail "a" a2 detail "a" to-252 (dpak) mechanical data 0068772-b
std16ne06l 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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